Abstract
Abstract Zinc selenide films have been synthesized by chemical bath deposition method onto stainless steel plate. The configuration of fabricated cell is n-ZnSe|NaOH (1 M) + S (1 M) + Na2S (1 M)|C(graphite) .The photoelectrochemical cell characterization of the films is carried out by studying current–voltage characteristics in dark, capacitance–voltage in dark, barrier height measurements, power output, photoresponse and spectral response. The study shows that ZnSe thin films are n-type conductivity. The junction ideality factor was found to be 3.85. The flat band potential is found to be −0.530 V. The barrier height value was found to be 0.171 eV. The study of power output characteristic shows open circuit voltage, short circuit current, fill factor and efficiency was found to be 153 mV, 20 μA, 29.41% and 0.13%, respectively. Photoresponse shows lighted ideality factor is 6.78. Spectral response shows the maximum current observed at 440 nm.
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