Abstract
Memristors based on oxide tunnel junctions are promising candidates for energy efficient neuromorphic computing. However, the low power sensing of the nonvolatile resistive state is an important challenge. We report the optically induced sensing of the resistive state of a memristor based on a La0.7Sr0.3MnO3/BaTiO3/In2O3:SnO2 (90:10) heterostructure with a 3 nm thick BaTiO3 ferroelectric barrier. The nonvolatile memristive response originates from the modulation of an interfacial Schottky barrier at the La0.7Sr0.3MnO3/BaTiO3 interface, yielding robust intermediate memristive states. The Schottky barrier produces a photovoltaic response when illuminated with a 3.3 eV UV LED, which depends on the state. The open circuit voltage Voc correlates linearly with the resistance of each state, enabling active sensing of the memristive state at light power densities as low as 20 mW/cm2 and temperatures up to 100 K. This opens up avenues for the efficient and minimally invasive readout of the memory states in hybrid devices.
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