Abstract
A thin layer of p-type Cu2O was grown over flexible 30μm thick copper substrates. Using Injection Chemical Vapor Deposition technique, n-type In2S3 thin films were grown over the Cu2O layer. A p–n junction was thus realized. The Cu2O/In2S3 hetero-structure showed photovoltaic behavior. A solar cell with the structure Cu/Cu2O/In2S3/Ag could be fabricated. An acidic texturization sequence was developed which increased the photo-sensitivity of the In2S3 window layer. The Cu/Cu2O/In2S3/Ag hetero-structure with the textured window layer had an open circuit voltage of 377mV, short circuit current density of 0.118mA/cm2 and fill factor of 33.34%. It was found that the efficiency of the solar cell depended upon the photo-sensitivity of the In2S3 window layer. The work demonstrates the use of copper substrate for thin film solar cell fabrication.
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