Abstract
Langmuir-Blodgett (LB) films based on graphene oxide were synthesized and studied. Structure and optical properties of the films are studied. At using of the films as counter electrodes in DSSC cells, it is shown that pure LB graphene oxide films, despite the advantages in electrotransport properties, have a rather high resistance. This is lead to the decreasing in the number of charge carriers injected into the semiconductor layer from the dye molecules, and in a complex decrease in the efficiency of solar cells. However, when LB films are deposited over the Pt layer, the electron transport characteristics of the counter electrodes are improved, which is manifested in an increase in the efficiency of solar cells compared to cells with a conventional Pt electrode.
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