Abstract
At an elevated temperature of 90 °C, a chemical bath deposition using an aqueous solution of Zn(NO3)2·6H2O and (CH2)6N4 resulted in the formation of both nanoflowers and microrods of ZnO on F-doped SnO2 glass with a seed layer. The nanoflowers and microrods were sensitized with dyes for application to the photoelectrodes of dye-sensitized solar cells (DSSCs). By extending the growth time of ZnO, the formation of nanoflowers was reduced and the formation of microrods favored. As the growth time was increased from 4 to 6 and then to 8 h, the open circuit voltage (Voc) values of the DSSCs were increased, whilst the short circuit current (Jsc) values varied only slightly. Changes in the dye-loading amount, dark current, and electrochemical impedance were monitored and they revealed that the increase in Voc was found to be due to a retardation of the charge recombination between photoinjected electrons and I3− ions and resulted from a reduction in the surface area of ZnO microrods. A reduced surface area decreased the dye contents adsorbed on the ZnO microrods, and thereby decreased the light harvesting efficiency (LHE). An increase in the electron collection efficiency attributed to the suppressed charge recombination counteracted the decreased LHE, resulting in comparable Jsc values regardless of the growth time.
Highlights
Photovoltaic cells convert solar energy into direct current electricity using p-type and n-type semiconductors
Porous TiO2 films provide extended surface area for dye adsorption resulting in the enhanced light harvesting efficiency (LHE) of dye-sensitized solar cells (DSSCs)
The morphology of the ZnO microrods was visualized by field emission scanning electron m3i.1cr. oMscoorpphyol(oFgEic-aSlECMh;arSa-c4t8e0ri0s,tiHcsitoafcZhni OHiLgahy-eTrescwhintholGorgoyw, tThoTkyimoe, Japan)
Summary
Photovoltaic cells convert solar energy into direct current electricity using p-type and n-type semiconductors. The dominance of inorganic solid-state junction cells is being challenged by the advent of third-generation photovoltaic cells such as dye-sensitized solar cells (DSSCs), polymer solar cells, and perovskite solar cells [1,2,3]. Porous TiO2 films provide extended surface area for dye adsorption resulting in the enhanced light harvesting efficiency (LHE) of DSSCs. TiO2, as an n-type semiconductor, is a good transporter of the electrons injected from the photoexcited dyes. TiO2, as an n-type semiconductor, is a good transporter of the electrons injected from the photoexcited dyes As another n-type semiconductor, ZnO has a band gap energy of 3.3 eV, similar to that of TiO2 (3.2 eV), and has much higher electron diffusivity than TiO2. ZnO is considered to be a viable alternative to TiO2 in DSSCs
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