Abstract

Solar cells based on CIGS have outperformed many thin film solar cells using other absorbers. A prospective CIGS active layer-based SC with an ITO/CdS/CIGS/CNGS hetero-structure, with a CdS buffer layer, ITO window layer, and CNGS in dual role: as extra absorber layer, and Back Surface Field (BSF) was suggested in this article. Through the utilization of the unidimensionnal simulation program (SCAPS-1D), the impacts of the absorbers densities of doping and thicknesses, interfacial defects, parasitic resistances, and working temperature on the device have been thoroughly examined. By exploring simulation results, excellent PV metrics, including 1.21 V, 32.25 mA/cm2, 75.08 %, and 29.39 % for Voc,Jsc,FF,andPCE are provided. The suggested hetero-structure based on CIGS, when simulated, offers a useful technique to create new solar cells with more performance than previously published devices.

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call