Abstract
Photovoltaic effects are studied for asymmetrically contacted single-walled carbon nanotube (SWCNT) barrier-free bipolar diode (BFBD) under infrared laser illumination. The BFBD is based on a SWCNT with a diameter d ∼ 1.5 nm and length L ∼ 800 nm, and the device shows a good open-circuit voltage of VOC = 0.23V and large photocurrent ISC of more than 15 nA.
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