Abstract
Silicon/silicon dioxide (Si/SiO 2 ) superlattice microdisk (SLMD) array solar cell structures were fabricated by a photolithography process. An open-circuit voltage of 661 mV was obtained from a Si/SiO 2 SLMD array solar cell using a superlattice composed of 5.6-nm-thick Si layers and 2.5-nm-thick SiO 2 layers. This open-circuit voltage is significantly higher than that of polycrystalline silicon microdisk solar cells. We also investigated the quantum efficiency and the temperature dependence of the open-circuit voltage. Detailed analysis suggests that the bandgap of the Si/SiO 2 superlattice is approximately 1.4 eV, which is larger than that of c-Si. • Photovoltaic effect in Si/SiO 2 superlattice solar cells. • Fabrication technique of sdsuperlattice microdisk array solar cells. • Confirmation of quantum size effect from electrical properties.
Published Version
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