Abstract
Quantum objects in the host material of photovoltaic converters can expand the spectral sensitivity to the long-wavelength spectral region. Samples with InAs quantum dots and thin layers in the host GaAs material were studied theoretically with the assumption of high-power laser subband irradiation input. Threshold factors have been established that affect the possibility of radiation heating. For noticeable increase in the temperature of the base material the necessary illumination values were estimated.
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