Abstract
Propelled by the development of layered transition metal dichalcogenides, heterojunctions have captivated tremendous attention due to various excitonic mechanisms assisted strong light-matter interaction. We demonstrate liquid phase exfoliation of WSe2 and fabrication of fast switchable WSe2/Si heterojunction. The heterojunction device showed obvious rectifying nature with ideality factor of 1.21 and it is explored under white illumination at power intensities varying from 5 to 18 mW/cm2. The WSe2/Si heterojunction photovoltaic device exhibited excellent transient photoresponse with highest responsivity of 86.11 mA/W and 23 ms response time under white light. Besides, heterojunction exhibited excellent photoresponse in broad spectral range from 390 to 1088 nm with highest photoresponsivity of 122.2 mA/W for 780 nm illumination. The device showed excellent response in temperature range 200 to 300 K. Eventually, the results advocate the huge significance of WSe2/Si heterojunction for photovoltaic cell and photodetection.
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