Photovoltage spectroscopy of InAs/GaAs quantum dot structures

Abstract

In addition to widely used photoluminescence spectroscopy photovoltaic measurement of quantum dot structures can give complementary information about electron and hole transitions. Structures with self-organized InAs quantum dots in GaAs matrix were grown by the Stranski–Krastanov mechanism using the low pressure metalorganic vapor phase epitaxy technique. Two types of samples were studied, with single and multiple quantum dot layers. We have shown that surface photovoltage spectroscopy can be used for the study of single, as well as multiple quantum dot layer structures.