Abstract
After cleaving and annealing for 50 h at temperature 600 K in vacuum conditions of 10−6 Torr, Si(111) surface shows narrowing of photovoltage spectral band in the region of 0.8–1.1 eV. The spectral band narrowing could be caused by surface states band narrowing due to Si(111) surface reconstruction with participation of hydrogen adatoms. The width of the narrow spectral band is broader at room temperature T = 300 K compared to that at low temperature T = 140 K. The peak of the narrow spectral band at low temperature is shifted to higher energy with respect to that at room temperature.
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