Abstract
After cleaving and annealing for 50 h at temperature 600 K in vacuum conditions of 10−6 Torr, Si(111) surface shows narrowing of photovoltage spectral band in the region of 0.8–1.1 eV. The spectral band narrowing could be caused by surface states band narrowing due to Si(111) surface reconstruction with participation of hydrogen adatoms. The width of the narrow spectral band is broader at room temperature T = 300 K compared to that at low temperature T = 140 K. The peak of the narrow spectral band at low temperature is shifted to higher energy with respect to that at room temperature.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.