Abstract
A novel photothermoelectric resistance effect of the Ti/SiO2/Si films induced by 10.6 [Formula: see text]m CO2 laser is discovered and investigated. The transient response of the resistance is observed and analyzed in this work. Under the continuous irradiation of the laser, the thermal resistance value changes with the irradiating time and gradually reaches a stable saturation. The results indicate that the rise time of thermal resistance is shortened and its change rate increased as laser power gets higher. The inner battery of the ohmmeter exerts the positive or negative bias voltage, causing the diffusion motion direction of the hot electrons to be opposite or the same direction with the drift motion, which can increase or decrease the thermal resistance value. Those experimental phenomena are explained by the drift and diffusion motion of the electrons. Based on the results, the Ti/SiO2/Si structure is an attractive candidate for thermal effect devices.
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