Abstract
EXAFS studies of reversible photostructural changes in bulk As and Ge chalcogenide glasses have been performed. The compositions studied were Ge33Se67, Ge40Se60, Ge40S60, As40S60 and As43S57. The magnitude of the photostructural change in both germanium and arsenic systems is larger in off-stoichiometry samples. In the AsS system the structural change is characterised by an increase in the AsSAs bond angle, whereas in the GeS (Se) systems a bond-breaking mechanism dominates. These data are consistent with neutron scattering and electron spin resonance data.
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