Abstract
Ablation of SiO 2 films by irradiation of undulator light was examined on samples fabricated by chemical vapor deposition (CVD) and thermal oxidation of silicon. CVD samples having different values of x in SiO x were prepared by changing the mixture ratio of SiH 4 and N 2O. The ablation rate increased of value of x in SiO x . Thermal growth oxide of silicon was also ablated by undulator irradiation at room temperature. The ablation rate increased with increasing excitation energy.
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