Abstract
Photo-electrical measurements are done on thin films of SeTeSb to see the influence of Sb additive on the light-induced conduction of binary Se80Te20 alloy. The ratio of electrical conductivity under dark to light conditions has been measured for measuring the photosensitivity of the samples. The activation energies of conduction for dark and light conditions (∆Eph) are also determined. The results reveal that both σph / σd and ∆Eph are reduced with an increase in Sb concentration. This indicates that density of defect states (DDS) is increased with an increase in the concentration of foreign element (i.e., Antimony) in thin films of these glassy systems. The cause of the increase in defects is also discussed. Start your abstract here…
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