Abstract
Various sources of recombination losses of photocurrents of the Schottky diodes are analysed as depending upon the semiconductor doping, the life time of minority carriers, the barrier height, and the interfacial layer between the metal and semiconductor. A general expression for the photocurrent is obtained within the scope of a diffusion theory approach with suitable boundary conditions. Recombination losses of photocurrent of Au-GaAs photodiodes are studied experimentally by measuring their spectral and field dependences. [Russian Text Ignored].
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