Abstract
We were investigated photoluminescence, cathodoluminescence and photosensitivity properties of porous silicon (PS) and PS capsulated by Al 2 O 3 thin film. This film was deposited by RF magnetron sputtering in argon - oxygen atmosphere and had crystalline structure. PS was processed in hydrogen under the high pressure. Light-emission and photosensitivity spectra such double structures in visible and infrared region were investigated. The process of light emitting had tendency to decrease. The cathodoluminescence decay for Al 2 O 3 3-PS-silicon substrate heterostructure was lower then for PS-silicon substrate.
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