Abstract
A Ca, Sr double-doped La2/3(Ca2/3Sr1/3)1/3MnO3 thin film with a thickness of about 60~nm was deposited on (100) LaAlO3 substrates using the RF magnetron sputtering method from the bulk compound prepared using the solid-state reaction method. The experimental results show that a phase transition from the ferromagnetic metallic state to the paramagnetic insulating state occurs at 341 K (near to Tp, the highest peak temperature). The RT curve deviation of the thin film with the application of CW laser is dramatic in the low-temperature range and Δ R/R is positive. At 276 K, the Δ R/R reaches the maximum, about 41 %, and the temperature of the photo-induced resistance maximum of this double-doped thin film appears near to room temperature range, which offers a new method for the application of CMR photo-electric devices.PACS Nos.: 78.66.w, 81.07b
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