Photoresponsive behavior of electron-beam irradiated MoS2 films

Abstract

We herein aim to improve the understanding of the photoresponsive behavior of electron-beam irradiated MoS2 films. In this context, MoS2-based photodetectors were fabricated via sputtering and electron beam irradiation (EBI). The structural transformation imparted on MoS2 through EBI and the relationship between the structural, stoichiometric, and photoelectric properties of the synthesized MoS2 were investigated. MoS2 channels displayed a remarkable photoresponse in the visible light region. More specifically, MoS2 treated with 3 kV-EBI showed a responsivity of 7.61 mA/W when illuminated by a 450 nm laser, which is a 970% increase from that of the as-deposited MoS2. The variation of the time-dependent photocurrent with respect to the EBI parameters employed was attributed to the internal defects of MoS2. We concluded that EBI is a low-temperature process that is compatible with sputtering, and it exhibits potential for application in the area of flexible optoelectronics.