Abstract
In this article, gallium zinc tin oxide (GaZTO) thin-film transistor (TFT) was deposited by radio-frequency cosputtering. High transmittance in the visible light region and wide energy bandgap of GaZTO thin film were ascertained by UVVisNIR spectrophotometer. GaZTO TFT exhibited a threshold voltage of 2.98V, mobility of 3.86 cm2Vs, onoff ratio of 1.5 106, and subthreshold swing of 0.392Vdecade. The TFT was employed to detect UV light, and the optoelectrical properties were investigated in detail. The UV-visible rejection ratio of GaZTO TFT under illumination was 9.8 105. The results revealed that GaZTO phototransistor is versatile and able to serve as a UV sensor.
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