Photoresponse in gate-tunable atomically thin lateral MoS2 Schottky junction patterned by electron beam

Abstract

Among various atomically thin two-dimensional materials, molybdenum disulphide (MoS2) is attracting considerable attention because of its direct energy bandgap in the 2H-semiconducting phase. On the other hand, a 1T-metallic phase, which is very important for unique applications, has been created by various methods. Recently, we demonstrated the creation of in-plane 1T-metal/2H-semiconductor MoS2 lateral Schottky junctions by using electron beam irradiation techniques and revealed their unique electrical properties. Here, we report the optoelectronic measurements proving the formation of this few-layer MoS2 lateral Schottky junction. A large photocurrent is confirmed in the reverse bias voltage regime, while it decreases with increasing distance between an electrode placed on the 2H region and the 2H/1T junction. These results suggest a concentration of high electric field and rapid dissociation of photogenerated excitons at the few-layer lateral Schottky junction, which are beneficial for highly efficient photodetectors.