Abstract
Aluminium doped Zinc oxide (ZnO) thin films were prepared through sol gel dip coating technique with various doping concentrations from 0 to 1.5 at.%. The thin films were characterized using X-ray Diffractometer (XRD), Field Emission Scanning Electron Microscope (FESEM), UV-Vis-NIR spectrophotometer and current voltage (I–V) measurement system. From the XRD analysis, increasing of doping concentration affected structural properties of the thin film where c-axis orientation becomes weaker. FESEM shows a homogenous thin films in nanoscale while the UV-Vis-NIR spectra reveals all films exhibit high transmission (>80 %) in UV-NIR region. Improvement in electrical properties with dopant concentrations is observed as shown by I–V measurement results. The lowest dark resistivity obtained was 1.44 Ω.cm, while the lowest resistivity under light illumination was 1.05 Ω.cm at 1 at.% of Al doping.
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