Abstract
Aluminum (Al) doped zinc oxide (ZnO) thin films with doping concentration of 1 at.% have been prepared using sol-gel spin-coating method. Annealing process has been applied on the prepared thin films at temperatures between 350 and 500 °C. The thin films were characterized using X-ray diffractometer (XRD), UV-Vis-NIR spectrophotometer and current voltage (I–V) measurement system for structural, optical and electrical properties characterization, respectively. XRD pattern reveals the improvement of c-axis orientation with annealing temperatures. The Urbach energy as calculated from transmittance spectra increased with annealing temperatures. I–V measurement results revealed improvement in electrical properties of the thin films with annealing temperatures.
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