Abstract
It is shown that transformation of photoelectric characteristics of sensors based on Cd1 − xZnxTe (x = 0.05–0.15) crystals into parametric spectral I(λ)-dI/dλ, kinetic I(t)-dI/dt, and dynamic U-I(Δy)f, λ signatures (I(λ) is the photocurrent, U is the voltage, f is the frequency, t is the time, and y is the coordinate) makes it possible to reveal integrative photoresponse features caused by the photoresponse asymmetry and nonlinearity. Indices of asymmetry and balance of dynamic and energy photoinduced states are suggested; these indices represent systematically the effect of multiscale fields on photoelectronic processes. Using these indices, the ranges of external effects at which systematic features of photoresponse of sensors are minimal or maximal are determined, which makes it possible to increase the efficiency of purposeful selection and treatment of sensors.
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