Photoresist for photochemical machining of alumina ceramic

Abstract

The applicability of a cyclized polybutadiene rubber as a resist material for photoetching of alumina ceramic in phosphoric acid was studied. Stencil breakdown, change in the stencil thickness during etching, and etch factor were measured. It was found that this material post-baked at temperatures as high as 300°C for 30 min provided good resistance to severe attack by the acid at temperatures of up to 300°C. The effects of post-bake temperature, of etching temperature, of etching time, and of original slot width on etch factor are discussed.