Abstract
A method of contactless characterization of semiconductors is developed which allows the charge carrier lifetime and diffusion coefficient to be determined locally with three-dimensional spatial resolution. The method is based on refraction of the probe beam that intersects the pump beam in the sample volume. In contrast to the conventional mirage-effect technique, the method discussed here uses the deeply penetrating and focused pump beam which allows the surface effect to be substantially weakened while determining the bulk characteristics. The method has been applied to Si wafers, showing a good quantitative agreement with data obtained independently by the conventional photoconductivity decay technique.
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