Abstract
Ion beam implantation has been used as a postprocessing technique to dramatically reduce the photorefractive effect in lithium niobate channel waveguides. The waveguides were fabricated by proton exchange and then annealed 1.0 MeV H+ ions were implanted through the existing channel waveguides such that the “damaged layer” was created beneath the existing channel waveguide. The output characteristics from the waveguides were subsequently examined. Highly stable single-mode outputs were observed with the waveguides retaining up to 95% of their original transmission. It is thought that this decrease in photorefractive susceptibility can be explained by the implant changing the defect structure and hence photovoltaic properties of the material.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
