Abstract
InAs self-assembling quantum dots (SAQDs) were grown on GaAs( n 1 1) substrates ( n = 2 , 3 , 4 , 5 ) by molecular beam epitaxy. Their structural and optical properties were studied by reflection high-energy electron diffraction, atomic force microscopy (AFM) and photoreflectance spectroscopy (PR). The PR spectra from 0.7 to 1.3 eV presented transitions associated to the SAQDs. The energy transitions were obtained by fitting the PR spectra employing the third derivative line-shape model. For n = 2 , 4 , 5 , two functions were required to fit the spectra. For n = 3 only one function was required, in agreement with the more uniform SAQDs size distribution observed by AFM on GaAs(3 1 1)A. Franz–Keldysh oscillations (FKO) were observed in the PR spectra at energies higher than the GaAs band gap. From the FKO analysis we obtained the GaAs built-in internal electric field strength ( F int) at the InAs/GaAs( n 1 1) heterointerface. From F int we made an estimation of the GaAs strain at the heterointerface.
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