Abstract
In this chapter we show how it is possible to modify the shape and size of InAs on GaAs self assembled quantum dots grown by Molecular Beam Epitaxy (MBE) by introducing a pause during the capping process, also known as partial overgrowth technique (Garcia et al. in Appl. Phys. Lett. 71:2014, 1997; Appl. Phys. Lett. 72:3172, 1998; Granados and Garcia in Appl. Phys. Lett. 82:2401, 2003). Under certain growth-pause capping conditions it is possible to obtain self-assembled quantum rings. The changes in shape and size lead to a modification of the quantum confinement potential and enables the control over fundamental physical properties, such as the optical emission energy from ground or excited states, the magnitude of its fine structure splitting or the sign of its permanent electric dipole moment.
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