Abstract
AbstractPhotoreflectance (PR) spectroscopy has been applied to study of step‐like GaInNAs/GaInNAs/GaAs double quantum well (DQW) structures grown by molecular beam epitaxy. PR features related to optical transitions in the active part of the step‐like QW structure, i.e. GaInNAs/GaInNAs QW, as well as PR features related to transitions above the step‐like barrier (SLB) have been clearly observed and analysed in this paper. The analysis of the QW transitions gives information about the number of confined states in the active part of the step‐like QW structure. In addition, the analysis of the second portion of PR signal gives information about the band gap energy of the SLB and optical transitions between hole and electron levels confined above the SLB. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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