Abstract
Photoreflectance (PR) and photoreflectance excitation (PRE) techniques are employed to investigate the optical properties of the GaAs1-xBix(x = 0%–3.7%)/GaAs heterostructure grown by molecular beam epitaxy. The relations between broadenings and intensities of E0 and E0 + ΔSO transitions in PR as a function of Bi content are disclosed. Both PR and PRE experimental techniques independently show that the oscillator strength of the E0 + ΔSO transition becomes larger compared to that of the fundamental gap as the Bi content increases. Such results suggest that the incorporation of Bi into GaAs leads to an increase of the effective masses for the spin-orbit split-off band.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
