Abstract
Photopotential measurements have been used to investigate the semiconducting characteristics of surface layers on metallic materials in different electrolytic environments. The photopotential data are measured by a pulse technique, the duration of the light pulse being 0.2–1 × 10 -3 sec and the ratio of light to dark time 1–2.5 × 10 -2. The oscillographic recording of the photopotentials allows the determination of the p- or n-type semiconducting properties of the surface layers. Photopotential recording is possible on free corroding metals or under galvanostatic anodic and cathodic polarization conditions. By using this technique, the surface layers formed in the following experimental conditions have been examined: 1. (1) free corroding or polarized copper electrodes in chloride solutions, in the presence or absence of different organic corrosion inhibitors; 2. (2) free corroding or polarized nickel electrodes in sulphate solution. In some cases the results are compared with those obtained by different techniques. A relationship between the semiconducting characteristics (the sign and time constant of the photopotential) and the protecting efficiency of the surface layers is examined.
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