Abstract
The influence of illumination (hv=1.17 eV, P=1 W/cm2 on the crystal surface) on the motion of dislocations in silicon is investigated in the temperature range 325°C–422°C using the double etching technique.The screw dislocation and one type of 60° dislocation (30/90 dislocation) exhibit a strong photoplastic effect : the activation energy of the 30/90 dislocation is changed by ΔE=0.68 eV.The different behaviour of the two types of 60° dislocations points to recombination enhancement of the dislocation motion in contrast to the effect of a changed charge state.
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