Abstract
Point defects generated during motion of dislocations in silicon have been investigated using their reaction with gold atoms during gold in-diffusion. Deep Level Transient Spectroscopy (DLTS) measurements in n- and p-type samples have revealed that in regions with dislocation densities of 104–106 cm−2, the concentration of gold atoms is by 1.5–2 orders of magnitude higher than in the dislocation-free regions of the same samples. The increase in the gold atom concentration in the regions containing dislocations is explained by the presence of some vacancy complexes generated by dislocations moving in their slip planes. Just after dislocation motion, most of these complexes are not detectable by DLTS. They become observable in DLTS due to their reaction with gold atoms.
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