Abstract
The photoelectric characteristics of photodiode pAlGaInAs(Zn)-nGaAs-Au structures have been investigated. It has been established experimentally that an internal photoelectric amplification arises in these structures when the nGaAs-Au potential barrier is connected in opposition to the (p(Al0.08Ga0.82)0.9In0.1As-nGaAs) heterojunction. The p(Al0.08Ga0.82)0.9In0.1As-nGaAs-Au structure operates as an injection photodiode when the p-n junction operates in the forward-bias regime and as a photodiode when this junction operates in the reversebias regime. The influence of the depletion regions of the base zone containing deep impurity centers on the photosensitivity and the spectral range of the indicated structures has been investigated.
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