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Abstract
Photonic crystals (PhCs) composed of β-FeSi2 with amorphous Si (a-Si) cladding layers are systematically studied to realize silicon photonics devices incorporating Si-based light-emitting layers. The bandgap characteristics of two types of triangular-lattice-type PhC in the telecommunication wavelength region of approximately 1.55 µm are calculated. They are composed of a-Si circular holes surrounded by β-FeSi2 (hole type) and β-FeSi2 circular columns surrounded by a-Si (column type). As a result, the bandgap for the hole-type PhC is obtained for TE polarization, while that for the column-type PhC is obtained for TM polarization. Furthermore, the PhC lattice constant range giving a bandgap for the column-type PhC is much wider than that for the hole-type PhC. The column-type PhC can be easily fabricated compared with the hole-type PhC. Thus, the column-type PhC is useful for actual applications from the viewpoint of fabrication and the bandgap characteristics themselves.
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