Abstract
An InP/InGaAs-based photonic band-edge laser bonded on silicon operating near 1.55 mum is presented. A gold reflector positioned below the slab containing the active layer reduces the optical losses of the Bloch-mode resonator. As a result, a quality factor exceeding 8000 is obtained at transparency leading to a laser threshold as low as 3.4 muJ/cm 2
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