Abstract
The optical emission from type-II semiconductor nanostructures is influenced by the long carrier lifetime and can exhibit remarkable thermal stability. In this study, utilizing a high quality photonic crystal circular nanobeam cavity with a high quality factor and a sub-micrometer mode volume, we demonstrated an ultra-compact semiconductor laser with type-II gallium antimonide/gallium arsenide quantum rings (GaSb/GaAs QRs) as the gain medium. The lasing mode localized around the defect region of the nanobeam had a small modal volume and significant coupling with the photons emitted by QRs. It leads the remarkable shortening of carrier lifetime observed from the time-resolved photoluminescence (TRPL) and a high Purcell factor. Furthermore, a high characteristic temperature of 114 K was observed from the device. The lasing performances indicated the type-II QRs laser is suitable for applications of photonic integrated circuit and bio-detection applications.
Highlights
Semiconductor nanostructures based on gallium antimonide (GaSb) and gallium arsenide (GaAs) have aroused considerable research interest because of their type-II band alignments and distinct material properties from those of the known InAs/GaAs based systems[1,2]
We demonstrated a photonic crystal (PhC) circular nanobeam defect cavity[41] laser with the type-II GaSb/GaAs quantum rings (QRs) as gain medium, for first time
From the temperature dependency of lasing threshold, we found that the device exhibited a high characteristic temperature, signifying the high thermal stability introduced by type-II GaSb/GaAs QRs
Summary
Hsiang-Ting Lin[1], Kung-Shu Hsu[1,2], Chih-Chi Chang[1,2], Wei-Hsun Lin[1], Shih-Yen Lin[1,2,3], Shu-Wei Chang[1,2], Yia-Chung Chang1,2 & Min-Hsiung Shih1,2,4*. We demonstrated a photonic crystal (PhC) circular nanobeam defect cavity[41] laser with the type-II GaSb/GaAs QRs as gain medium, for first time. To investigate lasing characteristics of the PhC circular nanobeam cavity with type-II GaSb/GaAs QRs, the fabricated devices were optically pumped with an 850 nm diode laser in the cryostat at 80 K. By linear fitting the curve, we obtained a threshold www.nature.com/scientificreports characteristic temperature T0 of 114 K for our PhC circular nanobeam laser, which was higher than that reported in our previous study[12,13] This number was better than those of conventional devices based on type-I nanostructures[74]. The high threshold characteristic temperature suggested that the lasing performances of the presented PhC circular nanobeam laser with type-II GaSb/GaAs QRs are more stable under different environment temperature. The emission from the type-II materials exhibit the longer photon lifetime and might benefit to some unique applications and systems
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