Photonic Crystal Circular Defect (CirD) Laser

Yifan Xiong,Shun Mizoguchi,Akihiro Maruta,Hanqiao Ye,Masahiko Kondow,Hirotake Kajii,Takuma Umeda,Masato Morifuji

doi:10.3390/photonics6020054

Yifan Xiong, Shun Mizoguchi + Show 6 more

Open Access

https://doi.org/10.3390/photonics6020054

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Journal: Photonics	Publication Date: May 20, 2019
Citations: 17	License type: CC BY 4.0

Affiliation: Osaka University

Abstract

We describe the design of photonic crystal circular defect (CirD) lasers to construct a compact optical module with a wavelength division multiplexing function for the application of inter-chip or intra-chip optical interconnects. Subsequently, we investigated the characteristics of CirD lasers including the quality factor of the cavity, the lasing threshold, and the modulation speed with a three-dimensional finite-difference time-domain method and two-dimensional rate equations. Finally, we demonstrated the single mode lasing and wavelength tuning behaviors of the CirD lasers using optical pumping technology under room-temperature continuous-wave conditions.

Highlights

Conventional copper-based electrical interconnects have increasing difficulty keeping up with the present rate of progress of inter-chip or intra-chip communications [1]
For intra-chip optical interconnects, larger numbers of CPU cores will be integrated on one chip as complementary metal oxide semiconductor (CMOS) scaling continues in the future, and it will become necessary to provide high bandwidth of 1 Tbps
We previously proposed a novel electrically-driven Photonic crystal (PhC) laser structure [24] called the circular defect (CirD) laser since a circular-defect cavity that forms a whispering gallery mode (WGM) along the cavity boundary is used to generate the laser light in this structure [25]

Summary

Introduction

Conventional copper-based electrical interconnects have increasing difficulty keeping up with the present rate of progress of inter-chip or intra-chip communications [1]. For intra-chip optical interconnects, larger numbers of CPU cores will be integrated on one chip as complementary metal oxide semiconductor (CMOS) scaling continues in the future, and it will become necessary to provide high bandwidth of 1 Tbps The heterogeneous integration of PhC lasers on Si is an attractive means to achieve a light source for inter-chip or intra-chip optical interconnects. Integrating several cavities with different R to only one PhC line-defect waveguide can achieve a monolithic integrated laser array that enables wavelength division multiplexing (WDM) without a conventional optical multiplexer. This architecture can be used to construct a CirD photodiode (PD) array.

Cird Laser Structure

Monolithic Optical Module Architecture

Resonant Wavelength and Quality Factory

Lasing Characteristics

Experimental Demonstration of Wavelength Tuning of Cird Lasers

Conclusions