Abstract
We demonstrate a structure design of electrically pumped 1.3 μm InAs/InGaAs quantum dot microdisk lasers on silicon with an output waveguide. Three-dimensional finite-difference time-domain method is used to numerically analyze the mode characteristics of the microdisk lasers. The effects of the diameter of microdisk cavity, the thickness of cladding layer, the etching depth and the waveguide width on the quality factor (Q-factor) are studied in detail. The results show that when the microdisk laser with a diameter of 7 μm, a thickness of cladding layer of 1.75 μm, an etching depth of 4.53 μm and a waveguide width of 0.5 μm, the Q-factor is maximized. The mode wavelength and the mode quality factor are 1304.45 nm and 19133, respectively. The photoelectric properties of InAs/InGaAs quantum dot microdisk lasers are simulated by rate equations.
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