Abstract
This paper describes effects of vacuum ultraviolet (VUV) optical emission from the plasma on the secondary electron emission coefficient (SEEC) in PIII processes. To examine this, time-resolved measurements of the VUV emission intensity and the SEEC are performed in continuous and square-wave-modulated discharges. For all the measured data, a good linearity between the SEEC and the VUV intensity is found out, and the ion-induced SEEC can be distinguished from the photon-induced SEEC. In the afterglow of the modulated discharge, the SEEC decreases because the VUV emission intensity. Therefore, ion implantation in the afterglow allows us to reduce a current requirement of the pulse generator, leading to low-cost PIII processes.
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