Abstract
We have studied the feasibility of photon-assisted quantum transport in semiconductor quantum point contacts or electron waveguides. Due to photon-induced intersubband transitions, it is expected that the drain/source conductance of the quantum point contacts can be modulated by far-infrared (f≥300 GHz) radiation, which is similar to the photon-assisted tunneling in superconducting tunnel junctions. An antenna/gate electrodes structure will be used to couple far-infrared photons into quantum point contacts of submicron dimensions. A calculation of the photon-induced drain/source current as a function of the far-infrared radiation power is also presented.
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