Abstract
We show that nonmonochromatic synchrotron radiation promotes reactions at liquid-nitrogen temperature (∼80 K) between NH3 and molecular beam epitaxy grown GaAs(100) which produces a thin nitride film. The photon-assisted reaction causes changes in the valence band and core level photoemission spectra from GaAs(100) which are similar to those reported for nitridation by a nitrogen plasma.
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