Abstract
AbstractThe influence of photon recycling onto the minority carrier distribution in double heterostructures is investigated. For perfect optical confinement of the luminescence radiation, the corresponding integro‐differential equation (without drift term) is solved exactly. The enlargement of the radiative lifetime, as measured in photoluminescence experiments, is calculated for various forms of the absorption coefficients, appropriate for band‐to‐band processes in direct‐gap semiconductors.
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