Abstract
The photon recycling effect in quantum film, quantum wire, and quantum box has been theoretically investigated using rate equation analysis and the density-matrix method, to obtain further reduction in the threshold current. The threshold reductions due to photon recycling in quantum film, wire, and box, in the case of lattice matched Ga0.47In0.53As/InP, are 40%, 24%, and 0%, respectively, for a fixed cavity loss of lasing mode normalized by the optical confinement factor α L/ξ L=50 cm-1. The estimation also shows that photon recycling is more effective in compressively-strained (CS) Ga0.18In0.82As0.73P0.27/InP quantum structures than in lattice-matched quantum structures. In both cases, the threshold reduction due to photon recycling is larger in the quantum film structure than in quantum wire and box structures, because the deviation between the peaks of the gain and the spontaneous emission spectra is large in the quantum film structure.
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