Abstract
Large electric field induced refractive index variation and large index variation absorption loss variation ratio in low fundamental absorption region are theoretically reported in a GaInAs/InP quantum box (QB) structure. This effect is shown to be applicable to low loss intersectional type optical switch. Moreover the Q B size dependence as well as fluctuations in QB size on QB-intersectional type optical switch was also discussed. As a first step towards the realization of such high-dimensional structure we have fabricated and measured the index variation in a GaInAs/InP multi-layered ( 3layers) quantum wire structure. The measured index variation was around 4 at an applied reverse bias voltage of 3V. I.
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