Photon assisted implantation (PAI)

Abstract

Experiments on photon assisted (PA) implantation are reported for boron implanted in (100) n-type Si. The light of an Ar-ion laser (488 and 514 nm) was used to shift the Fermi level at the surface to create a driving force on charged point defects. As a result, an altered defect structure and a junction depth reduction up to 15–20% was found. Low implantation energy and short thermal annealing promote the reduction of junction depth by PA implantation conditions.