Abstract
AgGaTe2 films were deposited on glass substrates by vacuum evaporation. Thermal annealing in dry N2 atmosphere at 400–500 °C changes the deposited film into a single phase of chalcopyrite AgGaTe2. The photomodulated transmittance measurements were carried out for the AgGaTe2 film at temperatures T from 10 to 300 K. The optical band-gap energies were determined to be E0B ∼ 1.3 eV and E0A ∼ 1.4 eV (T = 10−300 K). The data of E0 vs T were analyzed using an analytical formula for the explanation of the band-gap shrinkage effect in semiconductors.
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