Abstract
Wurtzite InN films are deposited on Si(100) and glass substrates by reactive rf-magnetron sputtering at a substrate temperature of 300 °C. The InN films have high electron concentrations of n∼4×1020 cm−3 at 300 K. The optical band-gap energy is determined to be ∼1.4 eV at 300 K. This value is considerably smaller than the previously reported value of ∼2 eV in sputter-deposited InN films. Strong infrared photoluminescence (PL) with a peak at ∼1.3 eV is also observed at room temperature. Thermal annealing in dry N2 atmosphere at 600 °C changes the deposited film from wurtzite InN to a cubic In2O3 that still exhibits PL emission but in the visible spectral region (∼2 eV).
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